Series-

PackageBulk

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)20 V

Current - Continuous Drain (Id) @ 25°C200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V

Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs0.658 nC @ 4.5 V

Vgs (Max)10V

Input Capacitance (Ciss) (Max) @ Vds45 pF @ 3 V

FET Feature-

Power Dissipation (Max)100mW (Ta)

Operating Temperature-65°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackageSOT-883VL

Package / CaseSC-101, SOT-883